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High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

机译：高迁移率Wse2 p型和n型场效应晶体管，由高掺杂石墨烯接触，用于低电阻触点

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Hsun-jen Chuang; Xuebin Tan; Nirmal Jeevi Ghimire; Meeghage Madusanka Perera; Bhim Chamlagain; Mark Ming-cheng Cheng; Jiaqiang Yan; David M; Zhixian Zhou;
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1. High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts [J] . Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire, Nano letters . 2014,第6期

机译：高迁移率WSe2 p型和n型场效应晶体管与高掺杂石墨烯接触以实现低电阻接触
2. Low-resistance contacts of electroless-plated metals with high-mobility organic semiconductors: Novel organic field-effect transistors with solution-processed electrodes [J] . M. Ito, M. Uno, J. Takeya Organic Electronics . 2015,第DECa期

机译：化学镀金属与高迁移率有机半导体的低电阻接触：带有溶液处理电极的新型有机场效应晶体管
3. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts [J] . Javey A, Tu R, Farmer DB, Nano letters . 2005,第2期

机译：具有化学掺杂触点的高性能n型碳纳米管场效应晶体管
4. Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance [C] . Jingli Wang, Xuyun Guo, Zhihao Yu, IEEE International Electron Devices Meeting . 2018

机译：陡坡P型2D WSE2场效应晶体管，带van der WaaS触点和负电容
5. Two-dimensional low-resistance contacts for high performance WSe2 and MoS2 transistors. [D] . Chuang, Hsun-Jen. 2016

机译：用于高性能WSe2和MoS2晶体管的二维低电阻触点。
6. Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts [O] . Sang-Hyeok Cho, Kwanghee Cho, No-Won Park, 2017

机译：具有低电阻金欧姆接触的多层SnSe纳米片状场效应晶体管
7. High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts [O] . Chuang, Hsun-Jen, Tan, Xuebin, Ghimire, Nirmal Jeevi, 2014

机译：高迁移率Wse2 p型和n型场效应晶体管用于低电阻触点的高掺杂石墨烯
8. W and WSi(x) Ohmic Contacts on p- And n-Type GaN; Journal of Vacuum Science and Technology A [R] . Abernathy, C. R. , Cao, X. A. , Eizenberg, M. , 1998

机译：p型和n型GaN上的W和W si（x）欧姆接触;真空科学与技术杂志a.

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

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